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| SK50GH065F Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 3 IGBT Module SK50GH065F Inverse Diode Module Target Data Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GH 1 21-02-2007 SCT (c) by SEMIKRON SK50GH065F Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 3 IGBT Module SK50GH065F This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Target Data Features Typical Applications Remarks GH 2 21-02-2007 SCT (c) by SEMIKRON SK50GH065F Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 21-02-2007 SCT (c) by SEMIKRON SK50GH065F Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG 4 21-02-2007 SCT (c) by SEMIKRON SK50GH065F UL recognized file no. E 63 532 5 21-02-2007 SCT (c) by SEMIKRON |
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